1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

TSOP48

ST/Numony

上传：深圳市拓亿芯电子有限公司

TSSOP

Micron

美光

上传：深圳市科恒伟业电子有限公司