M28F101-120N3中文资料意法半导体数据手册PDF规格书

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

Features

• 5V±10 SUPPLY VOLTAGE

• 12V PROGRAMMING VOLTAGE

• FAST ACCESS TIME: 70ns

• BYTE PROGRAMING TIME: 10µs typical

• ELECTRICAL CHIP ERASE in 1s RANGE

• LOW POWER CONSUMPTION

– Stand-by Current: 100µA max

• 10,000 ERASE/PROGRAM CYCLES

• INTEGRATED ERASE/PROGRAM-STOP TIMER

• OTP COMPATIBLE PACKAGES and PINOUTS

• ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 07h