16 Kbit 2Kb x8 Parallel EEPROM

DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V

文件：134.72 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION

DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc

文件：123.99 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection

DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A

文件：131.63 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Access Times of 150, 200, 250 and 350ns Single 5V짹10 Power Supply

文件：667.93 Kbytes 页数：10 Pages

PYRAMID

Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum

文件：663.98 Kbytes 页数：10 Pages

PYRAMID