Advanced 128K(16 x 8) UV Erasable PROM

Advanced 128K(16 x 8) UV Erasable PROM

文件：555.66 Kbytes 页数：9 Pages

INTEL

英特尔

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

文件：107.42 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

文件：107.42 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

128K (16Kx8) NMOS ONE TIME PROGRAMMABLE ROM

■ FAST ACCESS TIME: 150ns ■0 to +70°C STANDARD TEMPERATURE RANGE SINGLE +5V POWER SUPPLY +10 VCC TOLERANCE AVAILABLE ■LOW STANDBY CURRENT (40mA MAX) ■ TTL COMPATIBLE DURING READ AND PROGRAM ■FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE DESCRIPTION The ST27128AP is a 131,072-bit one

文件：570.44 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

128K (16Kx8) NMOS ONE TIME PROGRAMMABLE ROM

■ FAST ACCESS TIME: 150ns ■0 to +70°C STANDARD TEMPERATURE RANGE SINGLE +5V POWER SUPPLY +10 VCC TOLERANCE AVAILABLE ■LOW STANDBY CURRENT (40mA MAX) ■ TTL COMPATIBLE DURING READ AND PROGRAM ■FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE DESCRIPTION The ST27128AP is a 131,072-bit one

文件：570.44 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体