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M25PE80-VMS6TG

8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated

文件:1.38537 Mbytes 页数:66 Pages

NUMONYX

M25PE80-VMS6TG TR

Package:8-VDFN 裸露焊盘;包装:托盘 类别:集成电路(IC) 存储器 描述:IC FLASH 8MBIT SPI 75MHZ 8VDFPN

Micron Technology Inc.

Micron Technology Inc.

M25PE80-VMS6TP

8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated

文件:1.38537 Mbytes 页数:66 Pages

NUMONYX

M25PE80-VMS6G

8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated

文件:1.38537 Mbytes 页数:66 Pages

NUMONYX

M25PE80-VMS6P

8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated

文件:1.38537 Mbytes 页数:66 Pages

NUMONYX

详细参数

  • 型号:

    M25PE80-VMS6TG

  • 功能描述:

    IC FLASH 8MBIT 75MHZ 8QFN

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    Forté™

  • 产品变化通告:

    Product Discontinuation 26/Apr/2010

  • 标准包装:

    136

  • 系列:

    - 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 同步,DDR II

  • 存储容量:

    18M(1M x 18)

  • 速度:

    200MHz

  • 接口:

    并联

  • 电源电压:

    1.7 V ~ 1.9 V

  • 工作温度:

    0°C ~ 70°C

  • 封装/外壳:

    165-TBGA

  • 供应商设备封装:

    165-CABGA(13x15)

  • 包装:

    托盘

  • 其它名称:

    71P71804S200BQ

供应商型号品牌批号封装库存备注价格
Micron Technology Inc.
24+
8-QFN(5x6)
56200
一级代理/放心采购
询价
MICRON
25+
QFN-8
1001
就找我吧!--邀您体验愉快问购元件!
询价
Micron
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
Micron Technology Inc.
25+
8-SO
6843
样件支持,可原厂排单订货!
询价
Micron Technology Inc.
25+
8-SO
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
Micron Technology Inc.
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
询价
Micron镁光
26+
原盒原封
12500
原盘,原标,假一赔三,支持账期
询价
Micron
22+
8QFN (5x6)
9000
原厂渠道,现货配单
询价
ST/意法
13+
SOP8
224
原装/现货
询价
ST
23+
SOP8
8678
原厂原装
询价
更多M25PE80-VMS6TG供应商 更新时间2026-4-15 10:03:00