M24M02-DR集成电路（IC）的存储器规格书PDF中文资料

M24M02-DR属于集成电路（IC）的存储器。由意法半导体集团制造生产的M24M02-DR存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

特性 Features

• Compatible with following I2C bus modes:

– 1 MHz

– 400 kHz

– 100 kHz

• Memory array:

– 2 Mbit (256 Kbyte) of EEPROM

– Page size: 256 byte

– Additional write lockable page (M24M02-DR order codes)

• Single supply voltage:

– 1.8 V to 5.5 V over –40 °C / +85 °C

• Write time:

– Byte write within 10 ms

– Page write within 10 ms

• Random and sequential read modes

• Write protect of the whole memory array

• Enhanced ESD/latch-Up protection

• More than 4 million write cycles

• More than 200-years data retention

• Packages:

– SO8N ECOPACK2

– WLCSP ECOPACK2

– Unsawn wafer (each die is tested)

– RoHS compliant and halogen-free (ECOPACK2)