M24C02-DRDW3TP集成电路（IC）的存储器规格书PDF中文资料

M24C02-DRDW3TP属于集成电路（IC）的存储器。由意法半导体集团制造生产的M24C02-DRDW3TP存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description

The M24C02-A125 is a 2-Kbit serial EEPROM Automotive grade device operating up to 125 °C. The M24C02-A125 is compliant with the very high level of reliability defined by the Automotive standard AEC-Q100 grade 1.

The device is accessed by a simple serial I2C compatible interface running up to 1 MHz.

The memory array is based on advanced true EEPROM technology (electrically erasable programmable memory). The M24C02-A125 is a byte-alterable memory (256 × 8 bits) organized as 16 pages of 16 bytes in which the data integrity is significantly improved with an embedded Error Correction Code logic.

The M24C02-A125 offers an additional Identification Page (16 bytes) in which the ST device identification can be read. This page can also be used to store sensitive application parameters which can be later permanently locked in read-only mode.

Features

• Compatible with all I2C bus modes

– 1 MHz

– 400 kHz

– 100 kHz

• Memory array

– 2 Kbits (256 bytes) of EEPROM

– Page size: 16 bytes

– Additional Write lockable page

(Identification page)

• Extended temperature and voltage ranges

– -40 °C to 125 °C; 1.7 V to 5.5 V

• Schmitt trigger inputs for noise filtering

• Short Write cycle time

– Byte Write within 4 ms

– Page Write within 4 ms

• Write cycle endurance

– 4 million Write cycles at 25 °C

– 1.2 million Write cycles at 85 °C

– 600 k Write cycles at 125 °C

• Data retention

– 50 years at 125 °C

– 100 years at 25 °C

• ESD Protection (Human Body Model)

– 4000 V

• Packages

– RoHS compliant and halogen-free (ECOPACK2®)