Description

The M24128 is a 128-Kbit I2C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 16 K × 8 bits.

The M24128-BW can operate with a supply voltage from 2.5 V to 5.5 V, the M24128-BR can operate with a supply voltage from 1.8 V to 5.5 V, and the M24128-BF and M24128-DF can operate with a supply voltage from 1.7 V to 5.5 V. All these devices operate with a clock frequency of 1 MHz (or less), over an ambient temperature range of –40 °C / +85 °C. The M24128-D offers an additional page, named the Identification Page (64 byte). The Identification Page can be used to store sensitive application parameters which can be (later) permanently locked in Read-only mode.

Features

• Compatible with all I2C bus modes:

– 1 MHz

– 400 kHz

– 100 kHz

• Memory array:

– 128 Kbit (16 Kbyte) of EEPROM

– Page size: 64 byte

– Additional Write lockable page (M24128-D order codes)

• Single supply voltage and high speed:

– 1 MHz clock from 1.7 V to 5.5 V

• Write:

– Byte Write within 5 ms

– Page Write within 5 ms

• Operating temperature range:

– from -40 °C up to +85 °C

• Random and sequential Read modes

• Write protect of the whole memory array

• Enhanced ESD/Latch-Up protection

• More than 4 million Write cycles

• More than 200-years data retention

Packages

• SO8 ECOPACK2®

• TSSOP8 ECOPACK2®

• UFDFPN8 ECOPACK2®

• WLCSP ECOPACK2®

• UFDFPN5 ECOPACK2®

• Unsawn wafer (each die is tested)

M24128-BWDW6T属于集成电路（IC） > 存储器。意法半导体（ST）集团制造生产的M24128-BWDW6T存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。