丝印：M2；Package：DO-214AC；Surface Mount General Purpose Silicon Rectifiers

Features For surface mounted applications Low profile package Glass passivated chip junction Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU directives

文件：2.22862 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：M2；Package：SOT89；20 V, 3 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：750.75 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：M2；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input AND Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operation voltage range: VCC = 0.9 to 3.6 V

文件：181.62 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M2；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input AND Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 to 3.6 V

文件：180.98 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M2；Package：XSON6；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input AND Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.9 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 to 3.6 V (5

文件：200.39 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M2；Package：TSNP-10-9；Ultra small antenna tuning SP4T

Features  Ultra low RON resistance of 0.85 Ω in ON state  Low COFF capacitance of 160 fF in OFF state  High RF operating peak voltage handling of 45 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 default USID addresses via external USID_S

文件：118.84 Kbytes 页数：2 Pages

Infineon

英飞凌

丝印：M2；Package：TSNP-10-9；Ultra small antenna tuning SP4T

Features  Ultra low RON resistance of 0.85 Ω in ON state  Low COFF capacitance of 160 fF in OFF state  High RF operating peak voltage handling of 45 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 default USID addresses via external USID_S

文件：118.84 Kbytes 页数：2 Pages

Infineon

英飞凌

丝印：M2；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：73.09 Kbytes 页数：11 Pages

PHI

飞利浦

丝印：M2；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：690.77 Kbytes 页数：11 Pages

恩XP

丝印：M2；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司