512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62L5128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L

文件：248.88 Kbytes 页数：17 Pages

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512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62L5128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L

文件：248.88 Kbytes 页数：17 Pages

LYONTEK

来扬科技

512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62L5128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L

文件：248.88 Kbytes 页数：17 Pages

LYONTEK

来扬科技

512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62L5128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L

文件：248.88 Kbytes 页数：17 Pages

LYONTEK

来扬科技