512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY625128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

文件：249.8 Kbytes 页数：18 Pages

LYONTEK

来扬科技

512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY625128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

文件：249.8 Kbytes 页数：18 Pages

LYONTEK

来扬科技

512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY625128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

文件：249.8 Kbytes 页数：18 Pages

LYONTEK

来扬科技

512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY625128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

文件：249.8 Kbytes 页数：18 Pages

LYONTEK

来扬科技