1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

文件：162.35 Kbytes 页数：13 Pages

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

文件：162.35 Kbytes 页数：13 Pages

lyontek

来扬科技

1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of

文件：162.35 Kbytes 页数：13 Pages

lyontek

来扬科技