NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with emitter connected to flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter str

文件：90.35 Kbytes 页数：12 Pages

PHI

PHI

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic package, with emitter connected to flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high e

文件：88.61 Kbytes 页数：12 Pages

PHI

PHI

INVERTER EVALUATION BOARD

DESCRIPTION The LXE1686-0x CCFL Inverter Evaluation Boards are designed to demonstrate Linfinity’s LX1686 Backlight Controller IC. It consists of a fully assembled and tested inverter circuit board. This design guide complements the LX1686 controller application note AN-13 that discusses the over

文件：395.03 Kbytes 页数：15 Pages

Microsemi

美高森美

INVERTER EVALUATION BOARD

DESCRIPTION The LXE1686-0x CCFL Inverter Evaluation Boards are designed to demonstrate Linfinity’s LX1686 Backlight Controller IC. It consists of a fully assembled and tested inverter circuit board. This design guide complements the LX1686 controller application note AN-13 that discusses the over

文件：395.03 Kbytes 页数：15 Pages

Microsemi

美高森美

EVALUATION KIT

INTRODUCING LX1710/1711 AUDIOMAX Thank you for your interest in the latest generation of AudioMAX products. The enclosed LXE1710 evaluation board is a fully functional mono amplifier designed to demonstrate the “new and improved” Switching Class-D Power Amplifier IC from Linfinity Microsemi. The

文件：339.7 Kbytes 页数：18 Pages

Microsemi

美高森美

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with emitter connected to flange. FEATURES • Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits • Diffused emitter ballasti

文件：51.05 Kbytes 页数：8 Pages

PHI

PHI

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with emitter connected to flange. FEATURES • Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits • Diffused emitter ballasti

文件：51.05 Kbytes 页数：8 Pages

PHI

PHI

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with emitter connected to flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

文件：93.31 Kbytes 页数：12 Pages

PHI

PHI

Bi-directional

Features • Ideal for high-speed data lines • Manufactured in compliance with IEC 61000-4-2 Level 4 (8kV contact and 15kV air discharge) • Ultra-low Capacitance (0.05pF typical) in the ceramic version. The ceramic version is also Bi-directional, RoHS compliant, Halogen free, and Lead free. • A

文件：175.55 Kbytes 页数：3 Pages

MuRata

村田

1-Line Bi-directional TVS Diode

Features ® Low operating voltage: + 5V @ Ultra low capacitance:3pF typical © Ultra low leakage: nA level ® Low operating voltage: ® Low clamping voltage ® 2-pin leadless package ® Complies with following standards: ® — IEC 61000-4-2 (ESD) immunity test Air discharge: £15kV

文件：1.06508 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子