1.25A HIGH-EFFICIENCY 100KHZ SWITCHING REGULATOR

DESCRIPTION The LX2172/73 are fixed-frequency, current-mode switching regulator integrated circuits. These ICs contain all necessary control circuitry plus a 1.25A on-board transistor to design a complete DC:DC switching regulator with minimum external components. All functions are integrated in

文件：259.779 Kbytes 页数：6 Pages

MICROSEMI

美高森美

Legacy Power Management

Please see Data sheet for details

Microchip

微芯科技

ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL

Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a

文件：292.11 Kbytes 页数：12 Pages

RFMD

威讯联合

ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL

Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a

文件：292.11 Kbytes 页数：12 Pages

RFMD

威讯联合

ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL

Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a

文件：292.11 Kbytes 页数：12 Pages

RFMD

威讯联合