TS831

MICROPOWERVOLTAGESUPERVISORRESETACTIVELOW

TSD-831

SUPPORTPRODUCTSFORMICROLINEARI.C.S

ULC831

MICRO-POWER,CMOSINPUT,RRIO,1.4V,PUSH-PULLOOUTPUTCOMPARATOR

UPA831

NPNSILICONEPITAXIALTRANSISTORWITH2DIFFERENTELEMENTSINAFLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLDPACKAGE

DESCRIPTION TheµPA831TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES •Lownoise Q1:NF=1.2dBTYP.,Q2:NF=1.4dBTYP. @f=1GHz,VCE=3V,IC=7mA •Highgain Q1:|S21e|2=9.0dBTYP.,Q2:|S

UPA831TC

NPNSILICONEPITAXIALTRANSISTORWITH2DIFFERENTELEMENTSINAFLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLDPACKAGE

DESCRIPTION TheµPA831TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES •Lownoise Q1:NF=1.2dBTYP.,Q2:NF=1.4dBTYP. @f=1GHz,VCE=3V,IC=7mA •Highgain Q1:|S21e|2=9.0dBTYP.,Q2:|S

UPA831TC

NPNSILICONEPITAXIALTWINTRANSISTOR

UPA831TD

NPNSILICONRFTWINTRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD(M16,1208PACKAGE) FEATURES •2differentbuilt-intransistors(2SC5006,2SC5007) •Lownoise Q1:NF=1.2dBTYP.@VCE=3V,IC=7mA,f=1GHz Q2:NF=1.4dBTYP.@VCE=3V,IC=7mA,f=1GHz

UPA831TF

NPNSILICONEPITAXIALTWINTRANSISTOR

DESCRIPTION TheUPA831TFhastwodifferentbuilt-intransistorsforlowcostamplifierandoscillatorapplicationsintheVHF/UHFband.Lownoisefigures,highgain,highcurrentcapability,andmediumoutputgivethisdevicehighdynamicrangewithexcellentlinearityfortwo-stageamplifiers.T

UPA831TF

SiliconTransistor

NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE

WM831

MINIATUREHIGHPOWERLATCHINGRELAY