Power Transducer Series L-UNIT

文件：146.39 Kbytes 页数：5 Pages

MSYSTEM

爱模

N-Channel Enhancement Mode Field Effect Transistor

文件：105.79 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 36A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：186.13 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：105.79 Kbytes 页数：4 Pages

CET

华瑞