NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold m

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PHI

PHI

NPN microwave power transistor

恩XP

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

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NTE

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

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TECCOR

POWER RECTIFIERS(20A,50-200V)

Switchmode Full Plastic Dual Ultrafast Power Rectifiers ... Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction

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MOSPEC

统懋