MBR140ESF

SurfaceMountSchottkyPowerRectifierPlasticSOD-123Package

ThisdeviceusestheSchottkyBarrierprinciplewithalargearea metal−to−siliconpowerdiode.Ideallysuitedforlowvoltage,high frequencyrectificationorasfreewheelingandpolarityprotection diodesinsurfacemountapplicationswherecompactsizeandweight arecriticaltothesystem

MBR140F

1.0A40VSchottkydiode

MBR140F

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

FEATURES Schottkybarrierchip guardringdieconstructionfortransientprotection Lowforwardloss,highefficiency Highsurgecapability Highcurrentcapabilityandlowforwardvoltagedrop Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplication P

MBR140F

SchottkyDiodes

■Features ●Lowpowerloss,highefficiency ●Highforwardsurgecurrentcapability ●TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0

MBR140F

SCHOTTKYBARRIERRECTIFIERSREVERSEVOLTAGE20TO200VFORWARDCURRENT1.0A

DESCRIPTION Th eMBR120FMBR1200Fareavailablein SOD123FLpackage FEATURES ⚫Metalsiliconjunction,majoritycarrier conduction ⚫Forsurfacemountedapplications ⚫Lowpowerloss,highefficiency ⚫Highforwardsurgecurrentcapability ⚫Foruseinlowvoltage,highfre

MBR140L

1.0ALOWVFSURFACEMOUNTSCHOTTKYBARRIERDIODE

VeryLowForwardVoltage FastSwitching PNJunctionGuardRingforTransientand ESDProtection DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

MBR140LSF

LowForwardVoltageDropSchottkyBarrierDiodes

MBR140P

AXIALLEADRECTIFIERS

AXIALLEADRECTIFIERS ...employingtheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconsrjctionwithoxidepassivationandmetaloverlapcontact. Ideallysuitedforuseasrectifiersinlow-voltage,high-frequencyinvert

MBR140SF

SurfaceMountSchottkyPowerRectifier

MBR140SF

Foruseinlowvoltage,highfrequencyinverters