首页 >LTV817B-M>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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5VMicroprocessorSupervisoryCircuits GeneralDescription TheMAX817/MAX818/MAX819microprocessor(µP)supervisorycircuitssimplifypower-supplymonitoring,batterycontrol,andchip-enablegatinginµPsystemsbyreducingthenumberofcomponentsrequired.Thesedevicesaredesignedforusein+5V-poweredsystems.Lowsupplycurr | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
5VMicroprocessorSupervisoryCircuits GeneralDescription TheMAX817/MAX818/MAX819microprocessor(µP)supervisorycircuitssimplifypower-supplymonitoring,batterycontrol,andchip-enablegatinginµPsystemsbyreducingthenumberofcomponentsrequired.Thesedevicesaredesignedforusein+5V-poweredsystems.Lowsupplycurr | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
EvaluationBoard 1.1Features TheME817EVhasthefollowingfeatures: Supports40-pinLVDSdisplayupto1280x800 Supports50-pinRGBdisplayupto1024x600 TrimmableonboardLCDbiasingvoltages OnboardLCDbacklightLEDDriver Onboardaudiopoweramplifierandaudioconnectorforexternalspea | BRIDGETEK Bridgetek Pte Ltd. | BRIDGETEK | ||
3WATTGLASSZENERDIODES FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance. | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PNPMEDIUMPOWERTRANSISTOR Description TheSTF817A-STN817AarePNPtransistormanufacturedusingPlanarTechnologyresultinginruggedhighperformancedevices. Generalfeatures ■SURFACE-MOUNTINGDEVICESINMEDIUMPOWERSOT-223ANDSOT-89PACKAGES ■AVAILABLEINTAPE&REELPACKING Applications ■VOLTAGEREGULA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
OPA817800-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier 1Features •Widebandwidth: –Gain-bandwidthproduct:390MHz –Bandwidth(G=1V/V):800MHz –Large-signalbandwidth(2VPP):245MHz –Slewrate:970V/μs •Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:4μV/°C(maximum) •Inputvoltagenoise: | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
OPA817800-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier 1Features •Widebandwidth: –Gain-bandwidthproduct:400MHz –Bandwidth(G=1V/V):800MHz –Large-signalbandwidth(2VPP):250MHz –Slewrate:1000V/μs •Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:3.5μV/°C(maximum) •Inputvoltagenoi | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
OPA814600-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier 1Features •Widebandwidth: –Gain-bandwidthproduct:250MHz –Bandwidth(G=1V/V):600MHz –Large-signalbandwidth(2VPP):200MHz –Slewrate:750V/μs •Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:3.5μV/°C(maximum) •Inputvoltagenois | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
OPA814600-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier 1Features •Widebandwidth: –Gain-bandwidthproduct:250MHz –Bandwidth(G=1V/V):600MHz –Large-signalbandwidth(2VPP):200MHz –Slewrate:750V/μs •Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:3.5μV/°C(maximum) •Inputvoltagenois | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
OPA817800-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier 1Features •Widebandwidth: –Gain-bandwidthproduct:400MHz –Bandwidth(G=1V/V):800MHz –Large-signalbandwidth(2VPP):250MHz –Slewrate:1000V/μs •Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:3.5μV/°C(maximum) •Inputvoltagenoi | TITexas Instruments 德州仪器美国德州仪器公司 | TI |
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