首页 >LTS3401VE(L)>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SURFACEMOUNTPINDIODE VOLTAGE35VoltsPOWER200mW FEATURES Verylowseriesresistanceat100MHz(0.45Ωtypical@IF=10mA) Lowcapacitance(0.8pFtypical@VR=20V) Surfacemountpackageideallysuitedforautomaticinsertion IncompliancewithEURoHS2002/95/ECdirectives MECHANICALDATA Case: | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
SURFACEMOUNTPINDIODE VOLTAGE35VoltsPOWER200mW FEATURES Verylowseriesresistanceat100MHz(0.45Ωtypical@IF=10mA) Lowcapacitance(0.8pFtypical@VR=20V) Surfacemountpackageideallysuitedforautomaticinsertion Pbfreeproductareavailable:99SnabovecanmeetRoHS environmentsubsta | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
P-ChannelEnhancementModeMOSFET | MPOWERMajor-Power Technology Co., LTD. 久昌科技久昌科技股份有限公司 | MPOWER | ||
P-ChannelEnhancementModeMOSFET | MPOWERMajor-Power Technology Co., LTD. 久昌科技久昌科技股份有限公司 | MPOWER | ||
MilitaryStandardConnectorIndex MilitaryStandardConnectorIndex | GLENAIR Glenair, Inc. | GLENAIR | ||
P-Channel30V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
-30V(D-S)P-ChannelEnhancementModePowerMOSFET | MORESEMIMORE Semiconductor Company Limited 摩矽半导体摩矽半导体有限公司 | MORESEMI | ||
MultistandardSoundProcessorFamilywithVirtualDolbySurround | MICRONAS Micronas | MICRONAS | ||
-30V(D-S)P-ChannelEnhancementModePowerMOSFET | MORESEMIMORE Semiconductor Company Limited 摩矽半导体摩矽半导体有限公司 | MORESEMI | ||
P-Channel30V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
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