LTE42012R中文资料飞利浦数据手册PDF规格书

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated power and low thermal resistance

• Input matching cell improves input impedance and allows an easier design of wideband circuits.

APPLICATIONS

• Common emitter class-A power amplifiers up to 4.2 GHz in CW conditions for military and professional applications.