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LTE42012R中文资料飞利浦数据手册PDF规格书

厂商型号	LTE42012R
功能描述	NPN microwave power transistor
文件大小	72.89 Kbytes
页面数量	12 页
生产厂商	Philips Semiconductors
企业简称	PHI【飞利浦】
中文名称	荷兰皇家飞利浦
数据手册	下载地址一下载地址二
更新时间	2025-7-20 23:00:00
人工找货	LTE42012R价格和库存，欢迎联系客服免费人工找货

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated power and low thermal resistance

• Input matching cell improves input impedance and allows an easier design of wideband circuits.

APPLICATIONS

• Common emitter class-A power amplifiers up to 4.2 GHz in CW conditions for military and professional applications.