丝印：LT715；Photo DMOS-FET Relay

Description The LT715 is a 2-Form A solid state relay in a 8 pin SMD package that employs optically coupled MOSFET technology to provide 3750V/5000V of input to output isolation. The optically coupled input is controlled by a highly efficient GaAlAs infrared LED and MOS FETs on the output side

文件：161.36 Kbytes 页数：4 Pages

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丽太科技

5V, ±25A High Efficiency Silent Switcher®2 Step-Down Regulator

FEATURES  Silent Switcher®2 Architecture  Ultralow EMI  Eliminates PCB Layout Sensitivity  Internal Bypass Caps Reduce Radiated EMI  SVIN: 2.7V to 5V; PVIN: 1.5V to 5V  VOUT: 0.5V to 0.9∙VIN  Accurate Reference: 0.5V ±0.8% Over Temp  Integrated N-MOSFETs: 1.8mΩ/0.7mΩ  15ns Mi

文件：965.31 Kbytes 页数：31 Pages

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5V, ±25A High Efficiency Silent Switcher®2 Step-Down Regulator

FEATURES  Silent Switcher®2 Architecture  Ultralow EMI  Eliminates PCB Layout Sensitivity  Internal Bypass Caps Reduce Radiated EMI  SVIN: 2.7V to 5V; PVIN: 1.5V to 5V  VOUT: 0.5V to 0.9∙VIN  Accurate Reference: 0.5V ±0.8% Over Temp  Integrated N-MOSFETs: 1.8mΩ/0.7mΩ  15ns Mi

文件：959.34 Kbytes 页数：31 Pages

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亚德诺

5V, ±25A High Efficiency Silent Switcher®2 Step-Down Regulator

FEATURES  Silent Switcher®2 Architecture  Ultralow EMI  Eliminates PCB Layout Sensitivity  Internal Bypass Caps Reduce Radiated EMI  SVIN: 2.7V to 5V; PVIN: 1.5V to 5V  VOUT: 0.5V to 0.9∙VIN  Accurate Reference: 0.5V ±0.8% Over Temp  Integrated N-MOSFETs: 1.8mΩ/0.7mΩ  15ns Mi

文件：965.31 Kbytes 页数：31 Pages

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丝印：7153SPV；Package：LQFN；5V, ±25A High Efficiency Silent Switcher®2 Step-Down Regulator

FEATURES  Silent Switcher®2 Architecture  Ultralow EMI  Eliminates PCB Layout Sensitivity  Internal Bypass Caps Reduce Radiated EMI  SVIN: 2.7V to 5V; PVIN: 1.5V to 5V  VOUT: 0.5V to 0.9∙VIN  Accurate Reference: 0.5V ±0.8% Over Temp  Integrated N-MOSFETs: 1.8mΩ/0.7mΩ  15ns Mi

文件：959.34 Kbytes 页数：31 Pages

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亚德诺

丝印：7153SPV；Package：LQFN；5V, ±25A High Efficiency Silent Switcher®2 Step-Down Regulator

FEATURES  Silent Switcher®2 Architecture  Ultralow EMI  Eliminates PCB Layout Sensitivity  Internal Bypass Caps Reduce Radiated EMI  SVIN: 2.7V to 5V; PVIN: 1.5V to 5V  VOUT: 0.5V to 0.9∙VIN  Accurate Reference: 0.5V ±0.8% Over Temp  Integrated N-MOSFETs: 1.8mΩ/0.7mΩ  15ns Mi

文件：965.31 Kbytes 页数：31 Pages

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亚德诺

5V, ±25A High Efficiency Silent Switcher®2 Step-Down Regulator

FEATURES  Silent Switcher®2 Architecture  Ultralow EMI  Eliminates PCB Layout Sensitivity  Internal Bypass Caps Reduce Radiated EMI  SVIN: 2.7V to 5V; PVIN: 1.5V to 5V  VOUT: 0.5V to 0.9∙VIN  Accurate Reference: 0.5V ±0.8% Over Temp  Integrated N-MOSFETs: 1.8mΩ/0.7mΩ  15ns Mi

文件：959.34 Kbytes 页数：31 Pages

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亚德诺

5V, ±25A High Efficiency Silent Switcher®2 Step-Down Regulator

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