丝印：LT637；Photo DMOS-FET Relay

Description The LT637 is a 1-Form A solid state relay in a 4 pin SMD package that employs optically coupled MOSFET technology to provide 3750V/5000V of input to output isolation. The optically coupled input is controlled by a highly efficient GaAlAs infrared LED and MOS FETs on the output side

文件：163.25 Kbytes 页数：4 Pages

LETEX

丽太科技

光电继电器

光电继电器(光耦继电器or.光继电器.光藕合继电器)可适用於交流和直流，是信赖度相当高的产品，具备许多特点诸如：半永久性、低驱动电流、高绝缘耐压、超小型、光传输、非机械式接点 等等。其可被应用於量测仪器、电信、保全、医疗设备…等。为了拓展应用领域，开发多样功能、更多接点、低电容和低阻抗等产品是我们未来的主要目标。 • SOP、DIP、SMD Package in miniature design\n\n• Low driver power requirements\n\n(TTL / CMOS compatible)\n\n• High reliability ˙Arc-Free with no snubbing circuits\n\n• 1500/3750/5000Vrms input / output isolation\n\n• Tape & Reel version available\n\n• UL approved no. E222222;

Letex

丽太科技

Precision Instrumentation Amplifier with Level Shift and Output Clamping

DESCRIPTION The LT®6372-1 is a gain programmable, high precision instrumentation amplifier that delivers industry leading DC precision. This high precision enables smaller signals to be sensed and eases calibration requirements, particularly over temperature. The LT6372-1 incorporates features in

文件：2.66454 Mbytes 页数：28 Pages

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亚德诺

25μV, 0.3μV/°C, Low Noise Instrumentation Amplifier

FEATURES nn Single Gain Set Resistor: G = 1 to >1000 nn Excellent DC Precision nn Input Offset Voltage: 25μV Max nn Input Offset Voltage Drift: 0.3μV/°C Max nn Low Gain Error: 0.01% Max (G = 1) nn Low Gain Drift: 30ppm/°C Max (G > 1) nn High DC CMRR: 94dB Min (G = 1) nn Input Bias Curr

文件：2.55871 Mbytes 页数：28 Pages

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丝印：6370；Package：8-LeadPlasticSO；25μV, 0.3μV/°C, Low Noise Instrumentation Amplifier

FEATURES nn Single Gain Set Resistor: G = 1 to >1000 nn Excellent DC Precision nn Input Offset Voltage: 25μV Max nn Input Offset Voltage Drift: 0.3μV/°C Max nn Low Gain Error: 0.01% Max (G = 1) nn Low Gain Drift: 30ppm/°C Max (G > 1) nn High DC CMRR: 94dB Min (G = 1) nn Input Bias Curr

文件：2.55871 Mbytes 页数：28 Pages

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丝印：6370；Package：8-LeadPlasticSO；25μV, 0.3μV/°C, Low Noise Instrumentation Amplifier

FEATURES nn Single Gain Set Resistor: G = 1 to >1000 nn Excellent DC Precision nn Input Offset Voltage: 25μV Max nn Input Offset Voltage Drift: 0.3μV/°C Max nn Low Gain Error: 0.01% Max (G = 1) nn Low Gain Drift: 30ppm/°C Max (G > 1) nn High DC CMRR: 94dB Min (G = 1) nn Input Bias Curr

文件：2.55871 Mbytes 页数：28 Pages

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亚德诺

丝印：6370；Package：8-LeadPlasticSO；25μV, 0.3μV/°C, Low Noise Instrumentation Amplifier

FEATURES nn Single Gain Set Resistor: G = 1 to >1000 nn Excellent DC Precision nn Input Offset Voltage: 25μV Max nn Input Offset Voltage Drift: 0.3μV/°C Max nn Low Gain Error: 0.01% Max (G = 1) nn Low Gain Drift: 30ppm/°C Max (G > 1) nn High DC CMRR: 94dB Min (G = 1) nn Input Bias Curr

文件：2.55871 Mbytes 页数：28 Pages

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亚德诺

丝印：6370；Package：8-LeadPlasticSO；25μV, 0.3μV/°C, Low Noise Instrumentation Amplifier

FEATURES nn Single Gain Set Resistor: G = 1 to >1000 nn Excellent DC Precision nn Input Offset Voltage: 25μV Max nn Input Offset Voltage Drift: 0.3μV/°C Max nn Low Gain Error: 0.01% Max (G = 1) nn Low Gain Drift: 30ppm/°C Max (G > 1) nn High DC CMRR: 94dB Min (G = 1) nn Input Bias Curr

文件：2.55871 Mbytes 页数：28 Pages

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亚德诺

丝印：LGZN；Package：10-LeadPlasticDFN；25μV, 0.3μV/°C, Low Noise Instrumentation Amplifier

FEATURES nn Single Gain Set Resistor: G = 1 to >1000 nn Excellent DC Precision nn Input Offset Voltage: 25μV Max nn Input Offset Voltage Drift: 0.3μV/°C Max nn Low Gain Error: 0.01% Max (G = 1) nn Low Gain Drift: 30ppm/°C Max (G > 1) nn High DC CMRR: 94dB Min (G = 1) nn Input Bias Curr

文件：2.55871 Mbytes 页数：28 Pages

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亚德诺

丝印：LGZN；Package：10-LeadPlasticDFN；25μV, 0.3μV/°C, Low Noise Instrumentation Amplifier

FEATURES nn Single Gain Set Resistor: G = 1 to >1000 nn Excellent DC Precision nn Input Offset Voltage: 25μV Max nn Input Offset Voltage Drift: 0.3μV/°C Max nn Low Gain Error: 0.01% Max (G = 1) nn Low Gain Drift: 30ppm/°C Max (G > 1) nn High DC CMRR: 94dB Min (G = 1) nn Input Bias Curr

文件：2.55871 Mbytes 页数：28 Pages

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