MAX1963EZT-T

Low-Input-Voltage,300mALDORegulatorswithRESETinSOTandTDFN

MD1963

UltraHighSensitivityGateableChannelPhotomultiplierDC-Modules

Description TheChannelPhotomultiplierDCModuleseriesisdesignedforalllowlightapplicationse.g.inindustries,lifescienceormedicalanalysis,inhighenergyphysicsorpureresearch. Features ·Highdynamicrange ·Nocoolingrequired ·Veryhighstabilityinnoiselev

MH1963

UltraHighSensitivityChannelPhotomultiplierHeadIncludingHighVoltagePowerSupply

MH1963P

UltraHighSensitivityChannelPhotomultiplierHeadIncludingHighVoltagePowerSupply

NTE1963

IntegratedCircuitNegative,3-TerminalVoltageRegulator

Description: TheNTE1961throughNTE1977seriesofmonolithic3–terminalnegativevoltageregulatorsemployinternalcurrentlimiting,thermalshut–down,andsafe–areacompensationinanisolatedTO220typepackagemakingthemessentiallyindestrucible.Ifadequateheatsinkingisprovided,the

PFP1963

RBKSKTCAPSCREWA4SSM12X70(PK10)

RL-1963

NATIONALSEMICONDUCTORSIMPLESWITCHERAPPLICATIONS

RMPA1963

US-PCSCDMA,CDMA2000-1XandWCDMAPowerAmplifierModule

GeneralDescription TheRMPA1963PowerAmplifierModule(PAM)isFairchild’slatestinnovationin50Ohmmatched,surfacemountmodulestargetingUS-PCSCDMA/WCDMA/HSDPAandWirelessLocalLoop(WLL)applications.Answeringthecallforultra-lowDCpowerconsumptionandextendedbatterylifein

RN1963

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications ●IncludingtwodevicesinUS6(ultrasuperminitype6leads) ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN2961~RN2966

RN1963CT

SwitchingApplicationsInverterCircuitApplicationsInterfaceCircuitApplicationsDriverCircuitApplications

SwitchingApplications InverterCircuitApplications InterfaceCircuitApplications DriverCircuitApplications •TwodevicesareincorporatedintoafinepitchSmallMold(6pin) package. •Incorporatingabiasresistorintoatransistorreducespartscount. Reducingthepartscount