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MMBD770

SchottkyBarrierDiodes

Features Extremelylowminoritycarrierlifetime. Verylowcapacitance. Lowreverseleakage. Applications Forhigh-efficiencyUHFandVHFdetectorapplication.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

MMBD770

SURFACEMOUNTSCHOTTKYBARRIERDIODE

VeryLowCapacitance LowReverseLeakage PNJunctionGuardRingforTransientand ESDProtection ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

MMBD770W

SURFACEMOUNTSCHOTTKYDIODES

VOLTAGE70Volts200mA FEATURES •Extremelylowminoritycarrierlifetime •Lowcapacitance(0.4pF@20Vtypical) •Lowreverseleakage(30nA@35Vtypical) .IncompliancewithEURoHS2002/95/ECdirectives •Surfacemountpackageideallysuitedforautomaticinsertion

PANJITPan Jit International Inc.

強茂強茂股份有限公司

MMBD770WS

SURFACEMOUNTSCHOTTKYDIODES

VOLTAGE70Volts200mA FEATURES •Extremelylowminoritycarrierlifetime •Lowcapacitance(0.4pF@20Vtypical) •Lowreverseleakage(30nA@35Vtypical) .IncompliancewithEURoHS2002/95/ECdirectives •Surfacemountpackageideallysuitedforautomaticinsertion

PANJITPan Jit International Inc.

強茂強茂股份有限公司

MMBD770WS

SURFACEMOUNTSCHOTTKYDIODE(VoltageRange70VoltsPower200mWatts)

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

MMDL770

SchottkyBarrierDiode

Schottkybarrierdiodesaredesignedprimarilyforhigh–efficiencyUHFandVHFdetectorapplications.ReadilyavailabletomanyotherfastswitchingRFanddigitalapplications. •ExtremelyLowMinorityCarrierLifetime •VeryLowCapacitance—1.0pF@20V •LowReverseLeakage—200nA(max)

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

MMDL770

SchottkyBarrierDiodes

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

MMDL770

SchottkyBarrierDiode

FEATURES ●Lowreverseleakage—IR=200nA(Max.). ●VeryLowCapacitance—1.0pF@20V. ●ExtremelyLowminoritycarrierlifetime. ●Highreverseleakage—70V(min.) APPLICATIONS ●Forhigh-efficiencyUHFandVHFdetectorapplications.

DSK

Diode Semiconductor Korea

MMDL770

SchottkyBarrierDiode

FEATURES ●Lowreverseleakage—IR=200nA(Max.). ●VeryLowCapacitance—1.0pF@20V. ●ExtremelyLowminoritycarrierlifetime. ●Highreverseleakage—70V(min.) APPLICATIONS ●Forhigh-efficiencyUHFandVHFdetectorapplications.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

MMDL770

SchottkyBarrierDiode

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

详细参数

  • 型号:

    LSGT770-JL

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    Multi TOPLEDRG

供应商型号品牌批号封装库存备注价格
OSRAM/欧司朗
18+
P-LCC-4
12500
全新原装正品,本司专业配单,大单小单都配
询价
OSRAM/欧司朗
24+
3528/1210
40000
绝对原厂原装,长期优势可定货
询价
OSRAM/欧司朗
2223+
3528/1210
26800
只做原装正品假一赔十为客户做到零风险
询价
osram
24+
500000
行业低价,代理渠道
询价
24+
20000
询价
OSRAM
23+
SMD
9868
专做原装正品,假一罚百!
询价
SIEMENS
25+23+
4
33669
绝对原装正品全新进口深圳现货
询价
SIEMENS/西门子
2022+
SMD
24000
原厂代理 终端免费提供样品
询价
SIEMENS/西门子
23+
Sop-4
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Siemens/西门子
22+
SMD
162774
原装正品现货,可开13个点税
询价
更多LSGT770-JL供应商 更新时间2025-7-25 10:36:00