高压超结VDMOS

Lonten

龙腾半导体

600V 0.28ohm N-channel MOSFET

文件：1.16753 Mbytes 页数：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：323.21 Kbytes 页数：2 Pages

ISC

无锡固电

600V N-Channel MOSFET

文件：1.82232 Mbytes 页数：8 Pages

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

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