LT1806

180MHz,1mAPowerEfficientRail-to-RailI/OOpAmps

FEATURES APPLICATIONS nGainBandwidthProduct:180MHz n–3dBFrequency(AV=1):120MHz nLowQuiescentCurrent:1mAMax nHighSlewRate:90V/μs nInputCommonModeRangeIncludesBothRails nOutputSwingsRail-to-Rail nLowBroadbandVoltageNoise:4.2nV/√Hz nPower-DownMode:42μA n

LT1806

HighTemperature175°CDual100MHz,Rail-to-RailInputandOutput,Ultralow1.9nV/√HzNoise,LowPowerOpAmp

Features -ExtremeHighTemperatureOperation:–40°Cto175°C -LowNoiseVoltage:1.9nV/√Hz(100kHz) -LowSupplyCurrent:3mA/AmpMax -GainBandwidthProduct:100MHz -LowDistortion:–80dBat1MHz -LowOffsetVoltage:500μVMax -WideSupplyRange:2.5Vto12.6V -InputsandOutputsS

MAX1806

500mA,Low-VoltageLinearRegulatorinUMAX

MAX1806EUA

500mA,Low-VoltageLinearRegulatorinUMAX

MC1806

INTEGRATEDCIRCUITS

INTEGRATEDCIRCUITSFROMMOTOROLA MDTLintegratedcircuitsprovideanexcellentbalanceofspeedpowerdissipation,andnoiseimmunityforgeneralpurposedigitalapplications.Thelineincludesmanymultifunctiontypes.AdditionallogicpowerisprovidedbythewiredORcapabilityofthebasicM

MCF/B1806F

ChassisMountingTransformers

MCFSLASHB1806F

ChassisMountingTransformers

MRFIC1806

1.8GHzDRIVERAMPLIFIERANDRAMPCIRCUITGaAsMONOLITHICINTEGRATEDCIRCUIT

DesignedprimarilyforuseinDECT,JapanPersonalHandySystem(PHS),andotherwirelessPersonalCommunicationSystems(PCS)applications.TheMRFIC1806includesatwostagedriveramplifierandtransmitwaveformshapingcircuitryinalow–costSOIC–16package.Theamplifierportionemploysdepl

NTE1806

IntegratedCircuitHeadAmplifierCircuitfor4HeadVCR

Features: •Built–inEnvelopedComparingCircuit •Built–inPeakingAmplifierCircuit •LessNoiseVoltageReferredtoInput:1µVrms

P1806

N-CHANNEL60V-0.015
-50ATO-220STripFET™POWERMOSFET

■TYPICALRDS(on)=0.015 ■EXCEPTIONALdv/dtCAPABILITY ■100AVALANCHETESTED DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentof STMicroelectronisuniqueSingleFeatureSize™ strip-basedprocess.Theresultingtransistor showsextremelyhighpackingdensityforlowonresistance