丝印：1CHF；Package：SOT-23；LPV821, 650nA, Precision, Nanopower, Zero-Drift Amplifier

1 Features 1• Quiescent Current: 650 nA • Low Offset Voltage: ±10 μV (Maximum) • Offset Voltage Drift: ±0.096 μV/°C (Maximum) • 0.1-Hz to 10-Hz Noise: 3.9 μVPP • Input Bias Current: ±7 pA • Gain Bandwidth: 8 kHz • Supply Voltage: 1.7 V to 3.6 V • Rail-to-Rail Input/Output • Industry Stand

文件：1.09427 Mbytes 页数：25 Pages

TI

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SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

文件：35.85 Kbytes 页数：2 Pages

Polyfet

High-Brightness White

文件：380.81 Kbytes 页数：1 Pages

KODENSHI

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SURGE PROTECTOR

文件：213.25 Kbytes 页数：1 Pages

OKAYA