LPV801/LPV802 320 nA Nanopower Operational Amplifiers

1 Features 1• Nanopower Supply Current: 320 nA/channel • Offset Voltage: 3.5 mV (max) • TcVos: 1 μV/°C • Unity Gain-Bandwidth: 8 kHz • Wide Supply Range: 1.6 V to 5.5 V • Low Input Bias Current : 0.1 pA • Unity-Gain Stable • Rail-to-Rail Output • No Output Reversals • EMI Protection • T

文件：1.00149 Mbytes 页数：30 Pages

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SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances, r

文件：37.68 Kbytes 页数：2 Pages

POLYFET

3.0V/3.3V Microprocessor Supervisory Circuits

文件：287.48 Kbytes 页数：12 Pages

MAXIM

美信

3.0V/3.3V Microprocessor Supervisory Circuits

文件：287.48 Kbytes 页数：12 Pages

MAXIM

美信