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LPC660AIMSLASHNOPB.B中文资料德州仪器数据手册PDF规格书

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厂商型号

LPC660AIMSLASHNOPB.B

功能描述

LPC660 Low Power CMOS Quad Operational Amplifier

丝印标识

LPC660AIM

封装外壳

SOIC

文件大小

1.026 Mbytes

页面数量

27

生产厂商

TI

中文名称

德州仪器

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-11-21 12:53:00

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LPC660AIMSLASHNOPB.B规格书详情

1FEATURES

2• Rail-to-rail output swing

• Micropower operation: (1 mW)

• Specified for 100 kΩ and 5 kΩ loads

• High voltage gain: 120 dB

• Low input offset voltage: 3 mV

• Low offset voltage drift: 1.3 μV/°C

• Ultra low input bias current: 2 fA

• Input common-mode includes V−

• Operation range from +5V to +15V

• Low distortion: 0.01% at 1 kHz

• Slew rate: 0.11 V/μs

• Full military temp. range available

APPLICATIONS

• High-impedance buffer

• Precision current-to-voltage converter

• Long-term integrator

• High-impedance preamplifier

• Active filter

• Sample-and-Hold circuit

• Peak detector

DESCRIPTION

The LPC660 CMOS Quad operational amplifier is

ideal for operation from a single supply. It features a

wide range of operating voltages from +5V to +15V

and features rail-to-rail output swing in addition to an

input common-mode range that includes ground.

Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this

design. Input VOS, drift, and broadband noise as well

as voltage gain (into 100 kΩ and 5 kΩ) are all equal

to or better than widely accepted bipolar equivalents,

while the power supply requirement is typically less

than 1 mW.

This chip is built with National's advanced Double-

Poly Silicon-Gate CMOS process.

See the LPC662 datasheet for a Dual CMOS

operational amplifier and LPC661 datasheet for a

single CMOS operational amplifier with these same

features.

供应商 型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
24+
14-SOP
12000
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TI
20+
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65790
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NS
2025+
SOP-14
3665
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25+
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2660
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TI/德州仪器
24+
SOP14
9600
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TEXAS INSTRUMENTS
23+
SOIC14
9600
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NS
25+
SOP
2800
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HARRIS/哈里斯
23+
SOP-14
6000
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TI/德州仪器
23+
14-SOIC
3318
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TI/德州仪器
25+
SOP-14
880000
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