LP8900TLX-3333SLASHNOPB中文资料德州仪器数据手册PDF规格书

PDF无图
厂商型号

LP8900TLX-3333SLASHNOPB

功能描述

LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits

文件大小

667.85 Kbytes

页面数量

23

生产厂商

TI

中文名称

德州仪器

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-7 9:03:00

人工找货

LP8900TLX-3333SLASHNOPB价格和库存,欢迎联系客服免费人工找货

LP8900TLX-3333SLASHNOPB规格书详情

1 Features

1• Input Voltage Operation: 1.8 V to 5.5 V

• Output Voltage: 1.2 V to 3.6 V

• Accuracy Over Temperature: 1%

• Output Voltage Noise: 6 μVRMS

• PSRR: 75 dB at 1 kHz

• Dropout: 110 mV at 200 mA Load

• Quiescent Current: 48 μA per Regulator

• Start-Up Time: 80 μs

• Stable With Ceramic Capacitors as Small as 0402

• Thermal-Overload and Short-Circuit Protection

2 Applications

• Battery-Operated Devices

• Hand-Held Information Appliances

• Noise Sensitive RF Applications

• DC-DC Convertor Post Regulation and Filter

3 Description

The LP8900 is a dual LDO capable of supplying 200-

mA output current per regulator. Designed to meet

the requirements of RF and analog circuits, the

LP8900 provides low device noise, high PSRR, low

quiescent current, and superior line transient

response figures.

Using new innovative design techniques, the LP8900

offers class-leading device noise performance without

a noise bypass capacitor.

The LP8900 is designed to be stable with space

saving ceramic capacitors as small as 0402 case

size, enabling a solution size < 4 mm2. Performance

is specified for a –40°C to +125°C junction

temperature range.

Output voltage options from 1.2 V to 3.6 V are

available; for availability, contact your local TI sales

office.

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