PACKAGED 0.5 WATT POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm Schottky barrier gate. The recessed “mushroom” gate structure minim

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LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 750 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “m

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LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 750 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “m

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LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 750 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “m

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ULTRA LOW NOISE PHEMT

DESCRIPTION AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimi

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PACKAGED ULTRA LOW NOISE PHEMT

DESCRIPTION AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au g

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HIGH DYNAMIC RANGE PHEMT

DESCRIPTION AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimiz

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PACKAGED HIGH DYNAMIC RANGE PHEMT

DESCRIPTION AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au g

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CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

MEMORY ORGANIZATION PROGRAM MEMORY: Up to 4 Kbytes of the program memory can reside on-chip (except 80C31BH). In addition the device can address up to 64K of program memory external to the chip. DATA MEMORY: This microcontroller has a 128 x 8 on-chip RAM. In addition it can address up to 64 Kb

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INTEL

英特尔

CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

MEMORY ORGANIZATION PROGRAM MEMORY: Up to 4 Kbytes of the program memory can reside on-chip (except 80C31BH). In addition the device can address up to 64K of program memory external to the chip. DATA MEMORY: This microcontroller has a 128 x 8 on-chip RAM. In addition it can address up to 64 Kb

文件：229.47 Kbytes 页数：16 Pages

INTEL

英特尔