LP3000SOT89-1中文资料LOW NOISE, HIGH LINEARITY PACKAGED PHEMT数据手册Filtronic规格书

描述 Description

● DESCRIPTION AND APPLICATIONS
The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available in die form or in other packages.
Typical applications include PCS/Cellular low-voltage, high-efficiency amplifiers.● FEATURES
   ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz
   ♦ 15 dB Power Gain at 1.8 GHz
   ♦ 1.3 dB Noise Figure
   ♦ 46 dBm Output IP3 at 1.8 GHz
   ♦ 55% Power-Added Efficiency

特性 Features

   ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz
   ♦ 15 dB Power Gain at 1.8 GHz
   ♦ 1.3 dB Noise Figure
   ♦ 46 dBm Output IP3 at 1.8 GHz
   ♦ 55% Power-Added Efficiency

应用 Application

The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available in die form or in other packages.
Typical applications include PCS/Cellular low-voltage, high-efficiency amplifiers.● FEATURES
   ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz
   ♦ 15 dB Power Gain at 1.8 GHz
   ♦ 1.3 dB Noise Figure
   ♦ 46 dBm Output IP3 at 1.8 GHz
   ♦ 55% Power-Added Efficiency