丝印：LP2998MA；Package：SOIC(D)；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

文件：2.56645 Mbytes 页数：42 Pages

TI

德州仪器

LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

文件：2.56645 Mbytes 页数：42 Pages

TI

德州仪器

LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

文件：2.56645 Mbytes 页数：42 Pages

TI

德州仪器

LP2998 DDR-I and DDR-II Termination Regulator

文件：1.17987 Mbytes 页数：26 Pages

TI

德州仪器