High Brightness LED Lamp

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LUXPIA

2 W POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 3000 mm Schottky barrier gate. The recessed “mushroom” gate structure minim

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FILTRONIC

2W Power PHEMT

DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure minim

文件：49.74 Kbytes 页数：2 Pages

FILTRONIC

2W Power PHEMT

DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure minim

文件：49.74 Kbytes 页数：2 Pages

FILTRONIC