5.0 mm X 1.5 mm Series

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PANASONIC

松下

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 100 Watts Minimum Gain = 7.0 dB Efficiency = 50 (Min

文件：107.12 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon NPN Transistor RF Power Amp, CB

Description: The NTE329 is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: ● Specified 12.5V, 28MHz Charac

文件：24.16 Kbytes 页数：2 Pages

NTE

Asymmetric Thyristor

文件：102.7 Kbytes 页数：10 Pages

DYNEX