GaAs Bi-directional Infrared Light Emitting Diode

GaAs Bi-directional Infrared Light Emitting Diode For light source of VCR (VHS System) Features ● Two-way directivity ● High-power output, high-efficiency : PO = 1.8 mW (min.) ● Small resin package ● Long lifetime, high reliability ● Thin type package modified from LN59 Applications ● Lig

文件：43.96 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon epitaxial planar type

文件：49.72 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)

Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . .

文件：24.36 Kbytes 页数：3 Pages

NTE

Silicon Complementary Transistors General Purpose

Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. Features: ● Low Collector Saturation Voltage: 1V (Max) ● Hig

文件：33.1 Kbytes 页数：4 Pages

NTE