MSL-854UYL

SIDELOOKPACKAGESOLIDSTATELAMP

Description TheMSL-854UYLisdesignedbasedonanindustrystandardpackageforeaseofhandinganduse. Thepackageiswaterclearepoxywithinwhiteplastic. Features ●Highperformance ●Excellentchiptochipconsistency ●Highreliability Applications ●LCDbacklighting ●Symbolbac

MUR854

GLASSPASSIVATEDSUPERFASTRECTIFIER

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Fastswitchingforhighefficiency •Lowforwardvoltagedrop •Singlerectifierconstruction •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolaritypro

MUR854

GLASSPASSIVATEDSUPERFASTRECTIFIER

MZ854

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

NDH854P

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription SuperSOTTM-8P-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformanc

NT854

Castaluminumenclosedhousing.

NT854R

Glavanizedsteelwallrecessedhousing

OPB854

SlottedOpticalSwitch

Features: •Opaquehousingmaterialforambientlightrejection •Non-contactswitching •Printedcircuitboardmounting,leadspacing0.300”(7.62mm) •Slotwidth0.100”(2.54mm) •Choiceofthreemountingconfigurations Description: EachOPB854seriescontainsanInfraredLightEmitting

PE854BA

N-ChannelEnhancementModeFieldEffectTransistor

PE854DT

DualN-ChannelEnhancementModeFieldEffectTransistor

Features •Pb−Free,HalogenFreeandRoHScompliant. •LowRDS(on)toMinimizeConductionLosses. •OptimizedGateChargetoMinimizeSwitchingLosses. •100UISandRgTested. Applications •ProtectionCircuitsApplications. •ComputerforDCtoDCConvertersApplications.