MF-RHT900

HighTemperaturePTCResettableFuses

MH900

UltraHighSensitivityChannelPhotomultiplierHeadIncludingHighVoltagePowerSupply

MJ900

PowerTransistors

PowerTransistors TO-3Case(Continued)

MJ900

COMPLEMENTARYPOWERDARLINGTONS

TheMJ900,MJ901,MJ1000andMJ1001aresiliconepitaxial-bastransistorsinmonolithic Darlingtonconfiguration,andaremountedinJEDECTO-3metalcase. Theyareintendedforuseinpowerlinearandswitchingapplications. TheircomplementaryNPNtypesaretheMJ1000andMJ1001respectively.

MJ900

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=-3A •LowCollectorSaturationVoltage- :VCE(sat)=-2.0V(Max.)@IC=-3A APPLICATIONS •Designedforuseasoutputdevicesincomplementarygeneralpurposeampl

MJ900

COMPLEMENTARYPOWERDARLINGTONS

TheMJ900,MJ901,MJ1000andMJ1001aresiliconepitaxial-bastransistorsinmonolithicDarlingtonconfiguration,andaremountedinJEDECTO-3metalcase.Theyareintendedforuseinpowerlinearandswitchingapplications. PNPtypesaretheMJ900andMJ901,andtheircomplementaryNPNtypes

MJ900

COMPLEMENTARYPOWERDARLINGTONS

MLS900B

8-bitI/Otypemicro-controllerwithvoicefunction

MM900EV

EvaluationBoard

1.1Features TheME817EVhasthefollowingfeatures: Supports40-pinLVDSdisplayupto1280x800 Supports50-pinRGBdisplayupto1024x600 TrimmableonboardLCDbiasingvoltages OnboardLCDbacklightLEDDriver Onboardaudiopoweramplifierandaudioconnectorforexternalspea

MM900EVXA

DevelopmentModule

Features ForafulllistoftheFT90x’featuresrefertotheFT90xdatasheet. Inaddition,theMM900EVxAserieshasthefollowingfeatures: FT900100-pinQFNpackagemicrocontroller. RJ45withbuiltinmagneticfor10/100MbpsEthernettransfer. MicroSDcardsocketsupport. AStandar