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LMH6618MKXNOPB

LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

A6618

CMOSLOWDROPOUTREGULATOR(LDO)600mAADJUSTABLE,ULTRA-LOWNOISE,ULTRA-FAST

DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AP6618GM-HF

LowOn-resistance,FastSwitchingCharacteristic

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AWU6618

HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule

ANADIGICS

ANADIGICS

CGA-6618

DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER

ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren

RFMD

RF Micro Devices

CGA-6618

DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER

ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl

STANFORDStanford Microdevices

Stanford Microdevices

CGA-6618

DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier

ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle

SIRENZASIRENZA

圆通微波上海圆通微波电子有限公司

CGA-6618Z

DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier

ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle

SIRENZASIRENZA

圆通微波上海圆通微波电子有限公司

CGA-6618Z

DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER

ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren

RFMD

RF Micro Devices

GSC6618

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

HM6618A

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM6618B

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

IRF6618

HEXFETPowerMOSFET

Description TheIRF6618combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618

PowerMOSFET

Description TheIRF6609combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618PBF

DirectFET짰PowerMOSFET짰

Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618PBF

IdealforCPUCoreDC-DCConverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618TRPBF

IdealforCPUCoreDC-DCConverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618TRPBF

DirectFET짰PowerMOSFET짰

Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRFInternational Rectifier

英飞凌英飞凌科技公司

LMH6618

PowerWise짰130MHz,1.25mARRIOOperationalAmplifiers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LMH6618

130MHz,1.25mARail-to-RailInputandOutputOperationalAmplifierwithShutdown

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

供应商型号品牌批号封装库存备注价格
TI/德州仪器
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
TI/德州仪器
23+
SOT23-6
50000
全新原装正品现货,支持订货
询价
TI/德州仪器
2022
SOT23-6
80000
原装现货,OEM渠道,欢迎咨询
询价
TI/主营CC系列
22+
SOT23-6
17232
郑重承诺只做原装进口现货
询价
TI德州仪器
22+
SOIC-8
24000
原装正品现货,实单可谈,量大价优
询价
TI
SOIC|8
71000
16余年资质 绝对原盒原盘 更多数量
询价
TI
500
询价
TI
23+
8-SOIC
7750
全新原装优势
询价
NS
22+
SOP8
6980
原装现货,可开13%税票
询价
TI
22+
SOP-8
18779
原装正品现货
询价
更多LMH6618MKXNOPB供应商 更新时间2024-6-13 15:43:00