首页 >LMH0604RTWT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
-60V(D-S)P-ChannelEnhancementModePowerMOSFET | MORESEMIMORE Semiconductor Company Limited 摩矽半导体摩矽半导体有限公司 | MORESEMI | ||
N-channelMOSFETLowon-stateresistance Description TheN0604NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=6.5mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=4150pFTYP.(VDS=25V,VGS=0V) •Highcurr | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SMDRFSIGNALCHOKE | FRONTIER Frontier Electronics | FRONTIER | ||
SiliconPhotoTransistor Structure 1.1ChipSize:0.60mmX0.45mm 1.2Chipthickness:220±30um 1.3Metallization:Top-Al,Bottom-Au 1.4Passivation:SiliconNitride 1.5BondingPadSize -Emitter:130um -Base:60umX60um | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
N-ChannelEnhancementModeMOSFET | UNIKCWuxi U-NIKC Semiconductor CO.,LTD 旭康微无锡旭康微电子有限公司 | UNIKC | ||
SMDPowerInductorsShielded | PREMOPREMO CORPORATION S.L 普莱默 | PREMO | ||
SMDPOWERINDUCTORS GENERALSPECIFICATION: e)Resistancetosolderheat:260°C.10secs d)Operatingtemp.:-40°Cto+85°C c)Storagetemp.:-40°Cto+125°C b)Ratedcurrent:Baseontemp.rise&ǻL/L0A=10Max. a)Temp.rise:40°CMax. | SUPERWORLDSuperworld Electronics 超级世界电子超级世界电子公司 | SUPERWORLD | ||
SiliconNChannelMOSFETSeriesPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETSeriesPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETSeriesPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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