LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust

文件：3.23868 Mbytes 页数：59 Pages

TI

德州仪器

LMG352xR030-Q1 650-V 30-m廓 GaN FET with Integrated Driver, Protection, and Temperature Reporting

文件：1.58594 Mbytes 页数：40 Pages

TI

德州仪器

QFM9

TI/德州仪器

上传：深圳市胜彬电子有限公司

HIT

上传：飞利飞科技有限公司

HIT

上传：飞利飞科技有限公司