LMG3411R150RWHT集成电路（IC）的配电开关负载驱动器规格书PDF中文资料

1 Features

1• TI GaN process qualified through accelerated

reliability in-application hard-switching profiles

• Enables high-density power conversion designs

– Superior system performance over cascode or

stand-alone GaN FETs

– Low inductance 8 mm × 8 mm QFN package

for ease of design and layout

– Adjustable drive strength for switching

performance and EMI control

– Digital fault status output signal

– Only +12 V of unregulated supply needed

• Integrated gate driver

– Zero common source inductance

– 20-ns propagation delay for high-frequency

design

– Trimmed gate bias voltage to compensate for

threshold variations ensures reliable switching

– 25-V/ns to 100-V/ns adjustable slew rate

• Robust protection

– Requires no external protection components

– Overcurrent protection with <100 ns response

– Greater than 150-V/ns slew rate immunity

– Transient overvoltage immunity

– Overtemperature protection

– Undervoltage lockout (UVLO) protection on all

supply rails

• Device Options:

– LMG3410R150: Latched overcurrent

protection

– LMG3411R150: Cycle-by-cycle overcurrent

proection

2 Applications

• Industrial AC-DC

• Notebook PC power adapters

• LED signage

• Servo drive power stage

3 Description

The LMG341xR150 GaN FET with integrated driver

and protection enables designers to achieve new

levels of power density and efficiency in power

electronics systems. The inherent advantages of this

device over silicon MOSFETs include ultra-low input

and output capacitance, zero reverse recovery to

reduce switching losses by as much as 80%, and low

switch node ringing to reduce EMI. These advantages

enable dense and efficient topologies like the totempole

PFC.

The LMG341xR150 provides a smart alternative to

traditional cascode GaN and standalone GaN FETs

by integrating a unique set of features to simplify

design, maximize reliability and optimize the

performance of any power supply. Integrated gate

drive enables 100 V/ns switching with near zero VDS

ringing, less than 100-ns current limiting response

self-protects against unintended shoot-through

events, Overtemperature shutdown prevents thermal

runaway, and system interface signals provide selfmonitoring

capability.