丝印：NCE01P30；Package：TO-220-3L；LCE P-Channel Enhancement Mode Power MOSFET

文件：1.10206 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -10A RDS(ON)

文件：282.38 Kbytes 页数：7 Pages

NCEPOWER

新洁能

P-Channel Enhancement Mode Power MOSFET

文件：1.43344 Mbytes 页数：6 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

P-Channel Enhancement Mode MOSFET

FEATURES ® Vds=-100V D=-30A ® ROSON)+40mO@VGs=-10V

文件：1.57441 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子