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MJ11012

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON

High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC–20Adc •MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor •JunctionTemperatureto+200°C

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJ11012

30AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.120VOLTS200WATTS

High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain-hFE=1000(Min)@IC−20Adc •MonolithicConstructionwithBuilt−inBaseEmitterShuntResistor •JunctionTemperatureto+200C

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJ11012

POWERTRANSISTORS(30A,60-120V,200W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGainhFE=1000(Min)@IC=20A •MonolithicConstructionwithBuilt−inBaseEmitterShun

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MJ11012

NPNSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS)

SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

永盛电子永盛电子(香港)有限公司

MJ11012

High-CurrentComplementarySiliconTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJ11012

High-CurrentComplementarySiliconTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJ11012

PowerTransistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

MJ11012

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=60V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=20A •LowCollectorSaturationVoltage- :VCE(sat)=3.0V(Max.)@IC=20A •ComplementtoTypeMJ11011 APPLICATIONS •Designedforuseasoutputdevicesincomple

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJ11012

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: *HighGainDarlingtonPerformance *HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJ11012G

High-CurrentComplementarySiliconTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    LMC11012A

  • 制造商:

    Black Box Corporation

  • 功能描述:

    Dynamic Fiber Conversion System, 10-GbE SFP+ to SFP+, 2-Slot Chassis

供应商型号品牌批号封装库存备注价格
NSC
25+
SOP8
1000
大量原装现货,特价甩卖!
询价
NSC
24+
SOP
2250
100%全新原装公司现货供应!随时可发货
询价
BOSCH/博世
23+
LGA
69820
终端可以免费供样,支持BOM配单!
询价
NS/国半
21+
SOP-8
20000
百域芯优势 实单必成 可开13点增值税发票
询价
NS/国半
24+
SOP-8
9600
原装现货,优势供应,支持实单!
询价
NS
2019+/2020+
SOP8
18500
原装正品现货库存
询价
NS/国半
2022+
SOP-8
18500
原厂代理 终端免费提供样品
询价
NS
23+
SOP8
5940
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
NS
SOP8
18500
一级代理 原装正品假一罚十价格优势长期供货
询价
NS/国半
22+
SOP-8
100000
代理渠道/只做原装/可含税
询价
更多LMC11012A供应商 更新时间2025-5-10 11:02:00