LMBT3906DW1T1G中文资料乐山无线电数据手册PDF规格书

Dual Bias Resistor Transistor

The LMBT3906DW1T1 device isa spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low–power surface mount applications where board space is at a premium.

• hFE, 100–300

• Low VCE(sat), ≤ 0.4 V

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel

• Device Marking: LMBT3906DW1T1G = A2

特性 Features

● We declare that the material of product compliance with RoHS requirements.

● S - Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.