MMBT3904

SmallSignalTransistors(NPN)

FEATURES ◆NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ◆Ascomplementarytype,thePNP transistorMMBT3906isrecommended. ◆ThistransistorisalsoavailableintheTO-92 casewiththetypedesignation2N3904.

MMBT3904

NPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Capableof350mWattsofPowerDissipationand200mAIc. •OperatingandStorageJunctionTemperatures:-55°Cto150°C •SurfaceMountSOT-23Package •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant

MMBT3904

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable (MMBT3906) •IdealforMediumPowerAmplificationand Switching

MMBT3904

GENERALPURPOSETRANSISTORNPNSILICON

GeneralPurposeTransistor NPNSilicon

MMBT3904

GENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT

GeneralPurposeTransistors NPNandPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−323/SC−70packagewhichisdesignedforlowpowersurfacemountapplications. Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAut

MMBT3904

NPNSiliconSwitchingTransistor

NPNSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •Complementarytypes:SMBT3906...MMBT3906 •SMBT3904S:Fororientat

MMBT3904

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free

MMBT3904

GENERALPURPOSEAPPLIATION

GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906

MMBT3904

NPNGeneralPurposeAmplifier

MMBT3904

SMDGeneralPurposeTransistor(NPN)

SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications •RoHScompliance