丝印：LMA；Package：DO-214AC；13 To 40V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time P

文件：2.31636 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：LMA；Package：DO-214AA；11 To 170V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time P

文件：2.90188 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：LMA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：917.49 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：LMA；Package：SMB；Surface Mount Transient Voltage Suppressors

文件：277.03 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：AP10N06D；Package：TO-252；60V N-Channel Enhancement Mode MOSFET

文件：1.90426 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：AP13P06D；Package：TO-252；-60V P-Channel Enhancement Mode MOSFET

文件：1.67757 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：NCE01P13K；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

文件：1.10536 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：AP13P20D；Package：TO-252；-200V P-Channel Enhancement Mode MOSFET

文件：2.10702 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：NCE60P14AK；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

文件：1.39197 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：XD3002；Package：TO252；N-Channel Enhancement Mode Field Effect Transistor

文件：756.75 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子