LM7481集成电路（IC）的OR控制器理想二极管规格书PDF中文资料

1 Features

• Qualified for extended temperature applications

– Device temperature:

–55°C to +125°C ambient operating

temperature range

• 3-V to 65-V input range

• Reverse input protection down to –65 V

• Drives external back to back N-channel MOSFETs

• Ideal diode operation with 9.1-mV A to C forward

voltage drop regulation

• Low reverse detection threshold (–4 mV) with fast

response (0.5 μs)

• Active rectification up to 200-KHz

• 60-mA peak gate (DGATE) turn-on current

• 2.6-A peak DGATE turnoff current

• Integrated 3.8-mA charge pump

• Adjustable overvoltage protection

• Low 2.87-μA shutdown current (EN/UVLO=Low)

• 2.6-A peak DGATE turn-off current

• Meets automotive ISO7637 transient requirements

with a suitable TVS diode

• Available in space saving 12-pin WSON package

2 Applications

• Avionics Input reverse polarity protection

– Sensors

– Imaging

– Radar

• Active ORing for redundant power

3 Description

The LM74810 ideal diode controller drives and

controls external back to back N-channel MOSFETs

to emulate an ideal diode rectifier with power path

ON/OFF control and overvoltage protection. The wide

input supply of 3 V to 65 V allows protection and

control of 12-V and 24-V input powered systems.

The device can withstand and protect the loads

from negative supply voltages down to –65-V. An

integrated ideal diode controller (DGATE) drives the

first MOSFET to replace a Schottky diode for reverse

input protection and output voltage holdup. With a

second MOSFET in the power path the device allows

load disconnect (ON/OFF control) and overvoltage

protection using HGATE control. The device features

an adjustable overvoltage cut-off protection feature.

LM74810 employs reverse current blocking using

linear regulation and comparator scheme. With

common drain configuration of the power MOSFETs,

the mid-point can be utilized for OR-ing designs using

another ideal diode. The LM74810 has a maximum

voltage rating of 65 V. The loads can be protected

from extended overvoltage transients like 200-V

unsuppressed load dumps in 24-V battery systems

by configuring the device with external MOSFETs in

common source topology.