RM6602

NandP-ChannelEnhancementModePowerMOSFET

GeneralFeatures N-Channel VDS=30V,ID=3.5A RDS(ON)

S6602

SiCSchottkyBarrierDiodeBareDie

Features 1)Lowforwardvoltage 3)Temperatureindependentswitchingbehavior 2)Negligiblerecoverytime/current 4)Highsurgecurrentcapability Applications ・SwitchModePowerSupply ・EVCharger ・UninterruptiblePowerSupply ・AirConditioner ・SolarInverter ・MotorDrive

SPC6602

N&PPairEnhancementModeMOSFET

STC6602

DualN&PChannelEnhancementModeMOSFET

STC6602

N-andP-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

STT6602

N-andP-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

STT6602

N-Ch:3.3A,30V,RDS(ON)65m
P-Ch:-2.3A,-30V,RDS(ON)120m
N&P-ChannelEnhancementModeMos.FET

TPC6602

High-SpeedSwitchingApplications

TPC6602

TOSHIBATRANSISTORSILICONPNPEPITAXIALTYPE

TPC6602

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf